Wet Etching Method, Cleaning and Cleanness for Semiconductor Wafer

Wet-Chemical Etching and Cleaning of Silicon

A Introduction Research and manufacturing related to silicon devices, circuits, and systems often relies on the wet-chemical etching of silicon wafers. The dissolution of silicon using liquid solutions is needed for deep etching and micromachining, shaping, and cleaning. Also, wet-chemistries are often used for defect delineation in single crystal silicon materials. In this paper, a review of t...

Wafer Cleaning: Wet Methods Still Lead the Pack

As feature sizes continue their frantic descent into the sub-0.6 pm region, wafer cleaning is on its way toward becoming a true enabling technology. Ridding wafers of the i r process chemicals is one of the most common steps in fabrication. It’s also, often a dirty one, in terms of picking up contaminants. The heavy metals, alkali metals and light elements, all common to wafer processing, also ...

Advanced Plasma Processing: Etching, Deposition, and Wafer Bonding Techniques for Semiconductor Applications

Plasma processing techniques are one of the cornerstones of modern semiconductor fabrication. Low pressure plasmas in particular can achieve high radical density, high selectivity, and anisotropic etch profiles at low temperatures and mild voltages. This gentle processing environment prevents unwanted diffusion and degradation of materials due to heat and lattice damage from ion bombardment. Pl...

Trends in Wafer Cleaning

Effect of Isopropyl Alcohol Concentration and Etching Time on Wet Chemical Anisotropic Etching of Low-Resistivity Crystalline Silicon Wafer

A micropyramid structure was formed on the surface of a monocrystalline silicon wafer (100) using a wet chemical anisotropic etching technique. The main objective was to evaluate the performance of the etchant based on the silicon surface reflectance. Different isopropyl alcohol (IPA) volume concentrations (2, 4, 6, 8, and 10%) and different etching times (10, 20, 30, 40, and 50 min) were selec...